Kašauskas, V. and Anilionis, R. (2010) “Optimisation and Problems of the Channel Area Formed by Two Ion Implantations in NMOS Structures”, Elektronika ir Elektrotechnika, 104(8), pp. 35-38. Available at: https://eejournal.ktu.lt/index.php/elt/article/view/9205 (Accessed: 25September2020).