Fan, L., Knott, A. and Jorgensen, I. H. H. (2016) “Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process”, Elektronika ir Elektrotechnika, 22(3), pp. 37 - 43. doi: 10.5755/j01.eie.22.3.15312.