Tarnovskiy, G. N. and Osadchuk, V. A. (1999) “Simulation Analysis of Capacities Arsenide - Gallium of Field-Effect Transisors with a Gate the Schottky”, Elektronika ir Elektrotechnika, 22(4). Available at: https://eejournal.ktu.lt/index.php/elt/article/view/16560 (Accessed: 21November2024).