Tarnovskiy, G. N., and V. A. Osadchuk. 1999. “Simulation Analysis of Capacities Arsenide - Gallium of Field-Effect Transisors With a Gate the Schottky”. Elektronika Ir Elektrotechnika 22 (4). https://eejournal.ktu.lt/index.php/elt/article/view/16560.