KAŠAUSKAS, V.; ANILIONIS, R. Optimisation and Problems of the Channel Area Formed by Two Ion Implantations in NMOS Structures. Elektronika ir Elektrotechnika, [S. l.], v. 104, n. 8, p. 35-38, 2010. Disponível em: https://eejournal.ktu.lt/index.php/elt/article/view/9205. Acesso em: 30 sep. 2020.