TARNOVSKIY, G. N.; OSADCHUK, V. A. Simulation Analysis of Capacities Arsenide - Gallium of Field-Effect Transisors with a Gate the Schottky. Elektronika ir Elektrotechnika, [S. l.], v. 22, n. 4, 1999. Disponível em: https://eejournal.ktu.lt/index.php/elt/article/view/16560. Acesso em: 21 nov. 2024.