FAN, L.; KNOTT, A.; JORGENSEN, I. H. H. Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process. Elektronika ir Elektrotechnika, [S. l.], v. 22, n. 3, p. 37 - 43, 2016. DOI: 10.5755/j01.eie.22.3.15312. Disponível em: https://eejournal.ktu.lt/index.php/elt/article/view/15312. Acesso em: 21 nov. 2024.