Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction. Elektronika ir Elektrotechnika, [S. l.], v. 27, n. 4, p. 49–54, 2021. DOI: 10.5755/j02.eie.28723. Disponível em: https://eejournal.ktu.lt/index.php/elt/article/view/28723.. Acesso em: 5 dec. 2025.