Tarnovskiy, G. N., & Osadchuk, V. A. (1999). Simulation Analysis of Capacities Arsenide - Gallium of Field-Effect Transisors with a Gate the Schottky. Elektronika Ir Elektrotechnika, 22(4). Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/16560