TY - JOUR AU - Frivaldsky, Michal AU - Morgos, Jan AU - Zelnik, Richard PY - 2020/08/07 Y2 - 2024/03/29 TI - Evaluation of GaN Power Transistor Switching Performance on Characteristics of Bidirectional DC-DC Converter JF - Elektronika ir Elektrotechnika JA - ELEKTRON ELEKTROTECH VL - 26 IS - 4 SE - DO - 10.5755/j01.eie.26.4.25782 UR - https://eejournal.ktu.lt/index.php/elt/article/view/25782 SP - 18-24 AB - <p>The paper deals with the experimental analysis of the switching performance of selected GaN (Galium Nitride) power transistor, whose use is then expected in bidirectional buck/boost DC-DC converter. The switching performance was evaluated through highly accurate and verified simulation models of GS61008P transistor from GaN systems. Experiments have been provided for a wide spectrum of switching frequency and load current in order to verify transistor performance. Then, based on the results, it was expected that high-frequency operation (above 500&nbsp;kHz) should not distort the efficiency performance of the designed bidirectional converter. This was confirmed after laboratory measurements of the efficiency of the proposed DC-DC converter, while operation under very high switching frequency was more effective compared to low-frequency operation. Over 95&nbsp;% of efficiency was achieved for both buck and boost mode (125&nbsp;W), even switching frequency was above 500&nbsp;kHz.</p> ER -