TY - JOUR AU - Grigonis, A. AU - Joneliunas, S. PY - 1997/11/28 Y2 - 2024/03/28 TI - Anomalous Oxidation of GaAs in the CF2Cl2/O2 Plasma JF - Elektronika ir Elektrotechnika JA - ELEKTRON ELEKTROTECH VL - 13 IS - 4 SE - DO - UR - https://eejournal.ktu.lt/index.php/elt/article/view/15902 SP - AB - <span>The elemental structure of the surface of GaAs after etching in O</span><sub>2</sub><span>, CF</span><sub>2</sub><span>Cl</span><sub>2</sub><span>/O</span><sub>2</sub><span> has been analysed. The layers of formed oxides (AsxOy, GaxOy) on the surface of GaAs in oxygen or halogen-oxygen plasmas are annealed. The etching of GaAs in CF</span><sub>2</sub><span>Cl</span><sub>2</sub><span>/O</span><sub>2</sub><span> plasmas took place at the presence of intensive oxygen and arsenic interdiffusion in the near-surface layer. The surface was depleted by arsenic and enriched by oxygen and gallium oxides.</span> ER -