@article{Baskys_Sapurov_Zubavicius_2013, title={The New Equations of p-n Junction Carrier Injection Level}, volume={19}, url={http://eejournal.ktu.lt/index.php/elt/article/view/3467}, DOI={10.5755/j01.eee.19.2.3467}, abstractNote={The new equations of minority carrier hole and electron injection levels <em>k<sub>p</sub></em> and<em> k<sub>n</sub></em> valid at high-level injection have been derived. They relate the <em>k<sub>p</sub></em> and<em> k<sub>n</sub></em> and the voltage drop across the p-n junction depletion region <em>U<sub>d</sub></em>. At low <em>U<sub>d</sub></em>, i.e. at low-level injection the obtained equations coincide with well known exponential equations of injection level. However, at high-level injection when <em>U<sub>d</sub></em> becomes high and is close to the potential barrier of junction, the derived equations give increased steepness of <em>k<sub>p</sub></em> and<em> k<sub>n</sub></em> dependence on <em>U<sub>d</sub></em> as compared with the exponential law. The dependences of <em>k<sub>p</sub></em> and<em> k<sub>n</sub></em> of concrete silicon p-n junctions with different impurity concentrations have been analyzed using derived equations of injection level.<p>DOI: <a href="http://dx.doi.org/10.5755/j01.eee.19.2.3467">http://dx.doi.org/10.5755/j01.eee.19.2.3467</a></p>}, number={2}, journal={Elektronika ir Elektrotechnika}, author={Baskys, A. and Sapurov, M. and Zubavicius, R.}, year={2013}, month={Feb.}, pages={45-48} }