@article{Navickas_1998, title={GaAs Pixel Detectors}, volume={18}, url={https://eejournal.ktu.lt/index.php/elt/article/view/16036}, abstractNote={<span>We are designed pixel detectors on GaAs according national program "Microelectronics for Investigations of Particles, with recommended mains parameters: capacitance of pixel diodes - 500…200 pF, area - 200x200 mm2, leakage currents less 15 nA/mm2, gain - 30…50mV/fC, peaking time - 10…15 ns, equivalent noise charge - less 500 ē rms, power consumption - 1…1.5 mW/channel. </span>}, number={5}, journal={Elektronika ir Elektrotechnika}, author={Navickas, R.}, year={1998}, month={Oct.} }