Microwave Diffraction Dependencies of a Conductor Cylinder Coated with Twelve Glass and Semiconductor Layers on the n-Si Specific Resistivity

  • L. Nickelson Vilnius Gediminas Technical University, Semiconductor Physics Institute
  • J. Bucinskas Vilnius University


The analysis of absorption and scattering dependencies of a multilayer cylinder on the incident plane wave frequency is presented. The cylinder consists of ideal conductor cylinder coated with twelve lossy n-Si semiconductor - glass layers alternatively. The calculation of the scattered and absorbed powers per unit length is based on the rigorous solution of scattering boundary problem. Calculations take into account the dispersion properties of n-Si material. Dependences are calculated for different values of semiconductor specific resistivity when the incident microwave propagates in the normal (θ = 90o) and oblique (θ = 60o ) directions to the z-axis. Here are presented dependencies for the two polarizations of the incident microwave, i.e. the perpendicular (ψ = 0o) and parallel (ψ = 90o) ones. We discovered that there is a strong dependency of the absorbed power on the n-Si specific resistivity. There are intervals on the frequency f -axis where the scattered and absorbed powers have some small values, i.e., the microwave doesn't "see" the multilayer cylinder (Invisible Cloak) at some frequency bands. Ill. 9, bibl. 12 (in English; abstracts in English and Lithuanian).