The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices

Authors

  • N. Sleptsuk Tallinn University of Technology
  • O. Korolkov Tallinn University of Technology
  • J. Toompuu Tallinn University of Technology
  • T. Rang Tallinn University of Technology
  • V. Mikli Tallinn University of Technology

DOI:

https://doi.org/10.5755/j01.eee.18.8.2610

Keywords:

Contacts to semiconductors, diffusion welding, silicon carbide, solid-phase-interaction

Abstract

This paper presents the characteristics of solid-phase interaction of aluminum with silicon carbide in the process of creating a diffusion welding of contacts to semiconductor devices. It is shown that the solid-phase etching of silicon carbide has an isotropic polishing effect. Proved that not involved in dissolution carbon atoms precipitate as an amorphous thin layer. Are given the differences of the diffusion welded aluminum interaction between a semiconductor silicon carbide and silicon.

DOI: http://dx.doi.org/10.5755/j01.eee.18.8.2610

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Published

2012-10-17

How to Cite

Sleptsuk, N., Korolkov, O., Toompuu, J., Rang, T., & Mikli, V. (2012). The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices. Elektronika Ir Elektrotechnika, 18(8), 45-48. https://doi.org/10.5755/j01.eee.18.8.2610

Issue

Vol. 18 No. 8 (2012)

Section

MICRO-, NANOELECTRONICS

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