Application of High Intensity Radiation for Control of Parameters of Power Semiconductor Devices

  • L.P. Anufriev
  • A.F. Kerencev
  • V.L. Lanin

Abstract

The processes of mounting of power high-voltage transistors by the vibration soldering and soldering in the furnace are investigated. The statistical regulation of processes has supplied a high controllability and specific output of fit devices.
Published
2000-04-18
How to Cite
Anufriev, L., Kerencev, A., & Lanin, V. (2000). Application of High Intensity Radiation for Control of Parameters of Power Semiconductor Devices. Elektronika Ir Elektrotechnika, 26(3). Retrieved from http://eejournal.ktu.lt/index.php/elt/article/view/16842
Section
Articles