Technologies of Manufacture of Bipolar High-Speed Transistors

Abstract

Technologies of manufacture of bipolar high-speed transistors are classified to 4 groups according to the minimal width of base area and the methods used for contacts to electrodes formation. Technologies of the first group features obtaining of the electrodes by direct and lift-off metallization lithography. In the second group the distances between the electrodes are obtained by the self-alignment and self-formation processes. In the third group of technologies the electrodes are also depart sources. In the fourth group of technologies the microstructure of base is tree-dimensional. The width of base area within this group is equal only minimal size image of lithography.