Influence of Initial GaAs Surface Preparation on Electrical Characteristics Selenium Passivated GaAs Schottky Contact
AbstractIn this study the influence of initial GaAs surface preparation on electrical characteristics selenium passivated GaAs Schottky contact was investigated. There was shown, that type of the etchant, used for the initial GaAs surface polishing, has no influence on effective barrier height of the selenium passivated Al-nGaAs Schottky contact. There was revealed, that GaAs surface etching by HCl or NH4OH before passivation and surface oxidation by stagnant deionized water does not affect current-voltage characteristics of selenious acid passivated Al-nGaAs Schottky contact. It can be explained by effective etching of native oxides layer on GaAs surface by selenious acid.
Authors retain copyright and grant the journal the right of the first publication with the paper simultaneously licensed under the Creative Commons Attribution 4.0 (CC BY 4.0) licence.
Authors are allowed to enter into separate, additional contractual arrangements for the non-exclusive distribution of the paper published in the journal with an acknowledgement of the initial publication in the journal.
Copyright terms are indicated in the Republic of Lithuania Law on Copyright and Related Rights, Articles 4-37.