GaAs Pixel Detectors

Authors

  • R. Navickas

Abstract

We are designed pixel detectors on GaAs according national program "Microelectronics for Investigations of Particles, with recommended mains parameters: capacitance of pixel diodes - 500…200 pF, area - 200x200 mm2, leakage currents less 15 nA/mm2, gain - 30…50mV/fC, peaking time - 10…15 ns, equivalent noise charge - less 500 ē rms, power consumption - 1…1.5 mW/channel.

Published

1998-10-29

How to Cite

Navickas, R. (1998). GaAs Pixel Detectors. Elektronika Ir Elektrotechnika, 18(5). Retrieved from https://eejournal.ktu.lt/index.php/elt/article/view/16036

Issue

Vol. 18 No. 5 (1998)

Section

Articles

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