GaAs Pixel Detectors

R. Navickas

Abstract


We are designed pixel detectors on GaAs according national program "Microelectronics for Investigations of Particles, with recommended mains parameters: capacitance of pixel diodes - 500…200 pF, area - 200x200 mm2, leakage currents less 15 nA/mm2, gain - 30…50mV/fC, peaking time - 10…15 ns, equivalent noise charge - less 500 ē rms, power consumption - 1…1.5 mW/channel.

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Print ISSN: 1392-1215
Online ISSN: 2029-5731