GaAs Pixel Detectors

  • R. Navickas

Abstract

We are designed pixel detectors on GaAs according national program "Microelectronics for Investigations of Particles, with recommended mains parameters: capacitance of pixel diodes - 500…200 pF, area - 200x200 mm2, leakage currents less 15 nA/mm2, gain - 30…50mV/fC, peaking time - 10…15 ns, equivalent noise charge - less 500 ē rms, power consumption - 1…1.5 mW/channel.
Published
1998-10-29
How to Cite
Navickas, R. (1998). GaAs Pixel Detectors. Elektronika Ir Elektrotechnika, 18(5). Retrieved from http://eejournal.ktu.lt/index.php/elt/article/view/16036
Section
Articles