80-dB Microwave Noise from an Avalanche Transistor Circuit
Extremely high ‘excess noise ratio’ of 80 dB is observed from an avalanche transistor circuit, operating in a random pulse mode. Broadband noise spectrum measured from 30 MHz to 1 GHz exhibits good flatness with the nonuniformity of only 1 dB. Experiments have been performed with the silicon bipolar junction microwave transistors. An analog circuit model is proposed and investigated.
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