Analysis of Nonlinearities in Phototransistors

J. Anilionienė


A phototransistor model taking into account the main nonlinearities is introduced. For defining influence of nonlinearities on signal distortion, the method of Volterra – Wiener series has been offered. Simulation of phototransistor nonlinearities has been carried out considering nonlinearities of junction currents of an emitter and collector and their capacitances. Operational equation systems for an equivalent diagram of a phototransistor have been composed and analytic calculation expressions of functional series kernels have been obtained. Dependences of changes in constant components and in a first harmonic output current on input signal parameters have been presented. Il. 2, bibl. 4 (in English; summaries in English, Russian and Lithuanian).

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