Leakage Current Compensation for the 0.13 μm CMOS Charge Sensitive Preamplifier

  • V. Barzdėnas Vilnius Gediminas Technical University
  • R. Navickas Vilnius Gediminas Technical University

Abstract

We have been simulated the submicron CMOS charge sensitive preamplifier (CSP) with the leakage current compensation circuit, which allows reducing equivalent noise charge up to 54 electrons. Simulation has been performed with SPICE simulators using the BSIMV3.3 transistors parameters of the MOSIS 0.13 μm CMOS. The value of the feedback capacitor Cfb is chosen as the CGD≈1 fF capacitance of input transistors. The feedback resistance Rfb is implemented by PMOS transistors operating in the linear region. CSP has the following main electrical parameters: the minimum of ENC is in the leakage current region -3 nA…+6 nA and equal 54…70 ē, total gain of the chain is K=41.42 mV/kē, while the peaking time is τp≈35 ns. It is a promising solution for X-ray pixel detectors. Ill. 7, bibl. 10 (in English; summaries in English, Russian and Lithuanian).

Published
2015-03-19
Section
T 171 MICROELECTRONICS