Simulation of Stress Distribution in the Silicon Substrate

  • T. Keršys Kaunas University of Technology
  • R. Anilionis Kaunas University of Technology
  • D. Eidukas Kaunas University of Technology

Abstract

Si oxidation technological process is common occurrence in the semiconductors production process. The oxide which is growing in thermal oxidation causes intrinsic stresses in all structure. In stress area might be arising dislocations. Various intrinsic stresses appear when using integrated elements isolation methods such as LOCOS and oxidized trench. Thin films such as silicon nitride, silicon oxide and polysilicon are mostly usable in the semiconductors production. These films have the intrinsic stresses, which appear in the films deposition process apropos of different thermal expansion coefficients of the materials. By using mathematical simulation program ATHENA was accomplished mathematical simulation of Si thermal oxidation and thin film deposition technological processes and was evaluated the distribution of stresses in all semiconductor structure, Ill. 8, bibl. 7 (in English; summaries in English, Russian and Lithuanian).

Published
2007-04-19
How to Cite
Keršys, T., Anilionis, R., & Eidukas, D. (2007). Simulation of Stress Distribution in the Silicon Substrate. Elektronika Ir Elektrotechnika, 76(4), 3-8. Retrieved from http://eejournal.ktu.lt/index.php/elt/article/view/10705
Section
T 171 MICROELECTRONICS