Simulation of Low-Noise Low-Power CMOS Readout Front-End Electronics for Mammo- and Dentography

  • V. Barzdėnas Vilnius Gediminas Technical University
  • R. Navickas Vilnius Gediminas Technical University

Abstract

Simulation of differential charge sensitive amplifiers (CSA) for hybrid pixel detectors on CMOS technology for high energy particle physics and for mammography, dentography has been performed with PSPICE simulator using the BSIMV3.3 parameters of the MOSIS CMOS SCN 0.24 μm. Charge sensitive preamplifier when input charge 1…30 kē and input capacitance equal 0...100 fF has the following main electrical parameters: 167...73 mV/kē gain and low power consumption 1.2 μW/channel. The preamplifier has unipolar response with peaking time about 15...79 ns. A near-Gaussian pulse shape is produced, yielding optimum signal-to-noise characteristics, and equivalent noise charge of input (ENC) less 105 ē. Thermal analysis simulated in the range T= -120…+120ºC shows changes of not more than 20 ns in the decay time and less than 10% of the output signal amplitude. Ill. 8, bibl. 14 (in English; summaries in English, Russian and Lithuanian).

Published
2015-03-19
Section
T 171 MICROELECTRONICS